• HOME
  • Search & Results
  • Full Text
  • Thesis Details
 
Page: 206
 
 Full Screen

  • TITLE
  • CERTIFICATE
  • DEDICATION
  • DECLARATION
  • ACKNOWLEDGEMENT
  • PREFACE
  • CONTENTS
  • I. A BRIEF REVIEW OF THE ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF INDIUM OXIDE, TIN OXIDE AND INDIUM TIN OXIDE THIN FILMS
  • 1.1 Introduction
  • 1.2 Transparent Conductors
  • 1.3 Earlier Studies on Indium Oxide
  • 1.4 Earlier Studies on Tin Oxide
  • 1.5 Earlier Studies an Indium Tin Oxide
  • References
  • II. APPARATUS AND EXPERIMENTAL TECHNIQUES USED IN THE PRESENT STUDY
  • 2.1 Introduction
  • 2.2 Method of Preparation
  • 2.3 Resistive Heating Evaporation
  • 2.4 Electron Beam Gun Evaporation
  • Fig. 2.1 Schematic diagram of an electron beam gun.
  • 2.5 Production of Vacuum
  • 2.6 Oil Sealed Rotary Pump
  • Fig. 2.2 Cross-section of oil-sealed rotary pump.
  • 2.7 Diffusion Pump
  • Fig. 2.3 Schematic diagram of cross-section of a diffusionP-P -
  • 2.8 Vacuum Coating Plant
  • Plate 2.1 Photograph of the thin film vacuum coating unit Used in the laboratory.
  • 2.9 Substrate Cleaning
  • 2.10 Substrate Heater and Temperature Measurement
  • Fig. 2.4 Schematic diagram of a vacuum coating unit.
  • Fig. 2.5 Schemat.ic diagram of the substrate heater usedin the laboratory.
  • 2.11 Preparation of Films
  • 2.12 Sample Annealing
  • Fig.2.6 Block diagram of the temperature controller cum recorder
  • 2.13 Measurement of Thickness of Film
  • 2.14 Optical Method (Multiple Beam Interferometry)
  • 2.15 Tolanskys Fizeau Fringes Method
  • 2.16 Quartz Crystal Thickness Monitor
  • Fig. 2.7 Arrangement and figure pattern of Fizeaufringes.
  • Fig.2.8 Block diagram of a quartz crystal thickness monitor
  • 2.17 Measurement of Electrical Conductivity
  • Fig. 2. 9 Schematic diagram of electrical conductivitymeasurements. All dimensions are in mm.
  • 2.18 Conductivity Cell
  • Fig. 2.10 Schematic diagram of the cross-section of theconductivity cell.
  • 2.19 Electrometer
  • 2.20 UV-Visible Spectrophotometer
  • Fig. 2.11 Measurement of resistance using Keithleyprogrammable electrometer (Model No.617) in V/I mode.
  • 2.21 X-ray diffractometer
  • Fig. 2.12 Optical diagram of the spectrophotometer (Shimadzu W 160 A)
  • Fig. 2.13 Block diagram of the electrical system of thespectrophotometer (Shimadzu W 160 A)
  • References
  • III. ELECTRICAL PROPERTIES OF INDIUM OXIDE, TIN OXIDE AND INDIUM TIN OXIDE THIN FILMS
  • 3.1 Introduction
  • 3.2 Theory
  • 3.3 Indium Oxide
  • 3.3.1 Experiment
  • 3.3.2 Results and Discussion for Indium Oxide
  • 3.4 Tin Oxide
  • 3.4.1 Experiment
  • 3.4.2 Results and Discussion for Tin Oxide
  • 3.5 Indium Tin Oxide (ITO)
  • 3.5.1 Experiment
  • 3.5.2 Results and Discussion for Indium Tin Oxide
  • F i g. 3.27 Schematic energy band model for ITO.
  • Fig. 3 28 Schematic density of states diagram for a semiconductor dopedto various extents.
  • References
  • IV. OPTICAL STUDIES IN INDIUM OXIDE, TIN OXIDE AND INDIUM TIN OXIDE (ITO) THIN FILMS
  • 4.1 Introduction
  • 4.2 General Theory
  • Fig. 4.1 Reflection and transmission of light by a singlefilm.
  • 4.3 Determination of Energy Band Gap Indium Oxide
  • Fig. 4.3 Direct transition from the valence band to theconduction band.
  • 4.4 Indium Oxide
  • Fig. 4.4 Indirect transition from the valence band to theconduction band.
  • Fig. 4.5 Illustration of Burstein-Moss shift.
  • 44.1 Results and Discussion for Indium Oxide Films
  • 4.5 Tin Oxide
  • 4.5.1 Results and Discussion for Tin Oxide Films
  • 4.6 Indium Tin Oxide
  • 4.6.1 Results and Discussion for ITO Films
  • References
  • V. XRD STUDIES ON INDIUM OXIDE, TIN OXIDE AND INDIUM TIN OXIDE THIN FILMS
  • 5. 1 Introduction
  • 5. 2 Indium Oxide
  • 5. 3 Tin Oxide
  • 5. 4 Indium Tin Oxide
  • References
  • SUMMARY