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Full Screen- TITLE
- CERTIFICATE
- DECLARATION
- ACKNOWLEDGEMENT
- PREFACE
- CONTENTS
- 1. INTRODUCTION
- 1.1. Introduction
- 1.2. Ternary chalcopyrite compounds
- 1.3. Structure of chalcopyrites
- Fig.1.1. a. Sphalerite structure b. Chalcopyrite structure
- Fig.1.2. Schematic diagram of formation of 1-III-VI2 compounds from group IV elements
- 1.4. Phase behaviour and defects in l-III-VI2 compounds
- 1.5. Earlier studies on I-III-VI2 Compounds
- References
- 2. APPARATUS AND EXPERIMENTAL TECHNIQUES USED IN THE PRESENT STUDY
- 2.1. Introduction
- 2.2 Deposition methods for preparation of films
- 2.3. Production and measurement of vacuum
- Fig. 2.1. Cross-section of a rotary pump
- Fig. 2.2. Schematic of a high speed diffusion pump
- Fig. 2.3. Pirani gauge
- Fig. 2.4. Schematic of a Penning ionization gauge
- 2.4. Substrate
- Fig. 2.5. Schematic diagram of a vacuum coating plant
- Fig. 2.6. Photograph of the thin film unit and the other instruments used in the laboratory
- 2.5. Sample preparation
- 2.6. Deposition of films
- 2.7. Thickness measurement
- Fig. 2.7. Schematic of the flash evaporation set up
- Fig. 2.8. Fizeau fringe pattern and the experimental set up
- 2.8. Conductivity cell
- Fig. 2.9. Block diagram of the quartz crystal thickness monitor
- Fig. 2.10. Cross-section of the conductivity cell
- 2.9. Electrometer (Keithley model 617)
- 2.10. Conductivity and Hall effect measurements
- Fig. 2.11 (b) Schematic diagram of measuring resistance on Keithley using V/1 function
- Fig. 2.12. Connections on the sample (film)
- 2.11. Double beam spectrophotometer
- 2.12. X-ray diffractometer
- Fig. 2.13. A simphfied block diagram of the shimadzu UV 160A spectrophotometer
- Fig. 2.14. Optical diagram of the Shimadzu UV 160A spectrophotometer
- References
- 3. ELECTRICAL STUDIES ON CuInSe2, AgInSe2 AND CuAISe2 THIN FILMS
- 3.1. Introduction
- 3.2. Theory
- 3.3. CulnSe2 thin films
- a. Effect of substrate temperature
- b. Effect of air annealing
- c. Effect of vacuum annealing
- d. Effect of composition
- 3.4. AgInSe2 thin films
- a. Effect of substrate temperature
- b. Effect of air annealing
- c. Effect of vacuum annealing
- 3.5. CuAISe2 thin films
- 3.6. Conclusion
- References
- 4. OPTICAL STUDIES ON CuInSe2, AgInSe2 AND CuAISe2 THIN FILMS
- 4.1. Introduction
- 4.2. Theory
- Fig. 4.1. Direct transition
- Fig. 4.2. Indirect transition
- 4.3. CuInSe2 thin films
- a. Effect of substrate temperature
- b. Effect of air annealing
- c. Effect of vacuum annealing
- d. Effect of composition
- 4.4. AgInSe2 thin films
- a. Effect of substrate temperature
- b. Effect of air annealing
- c. Effect of vacuum annealing
- 4.5. CuAISe2 thin films
- a. Effect of vacuum annealing
- 4.6. Conclusion
- References
- 5. STRUCTURAL STUDIES ON CuInSe2, AgInSe2 AND CuAISe2 THIN FILMS
- 5.1. Introduction
- 5.2. Theory
- 5.3. CuInSe2 thin films
- 5.4. AglnSe2 thin films
- 5.5. CuAISe2 thin films
- 5.6. Micro structural studies
- Fig. 5.8.a. SEM of room temperature deposited CuInSe2 thin film of thickness 1900A for magnification 10k
- Fig. 5.8.b. SEM of room temperature deposited CulnSe2 thin film of thickness 1900A for magnification 20k
- Fig. 5.8.c. SEM of room temperature deposited CuInSe2 thin film of thickness 1900A for magnification 30k
- Fig. 5.9.a. SEM of CulnSe2 thin film of thickness 2000A deposited at 450°C for magnification 10k
- Fig. 5.9.b. SEM of CuInSe2 thin film of thickness 2000A deposited at 450°C for magnification 20k
- Fig. 5.9.c. SEM of CuInSe2 thin film of thickness 2000A deposited at 450°C for magnification 30k
- 5.7. Conclusion
- Fig. 5.10.a. SEM of room temperature deposited CuInSe2 thin film of thickness 2000A vacuum annealed at l00°C for one hour for magnification 10k
- Fig. 5.10.b. SEM of room temperature deposited CuInSe2 thin film of thickness 2000A vacuum annealed at 100°C for one hour for magnification 20k
- Fig. 5.10.c. SEM of room temperature deposited CuInSe2 thin film of thickness 2000A vacuum annealed at l00°C for one hour for magnification 30k
- Fig. 5.11.a. SEM of room temperature deposited AgInSe2 film of thickness 3000A for magnification 10k
- Fig. 5.11.b. SEM of room temperature deposited AgInSe2 film of thickness 3000A for magnification 20k
- Fig. 5.11.c. SEM of room temperature deposited AgInSe2 film of thickness 3000A for magnification 30k
- Fig. 5.12.a. SEM of room temperature deposited AgInSe2 thin film of thickness 2800A vacuum annealed at 50°C for one hour for magnification 10k
- Fig. 5.12.b. SEM of room temperature deposited AglnSe2 thin film of thickness 2800A vacuum annealed at 50°C for one hour for magnification 20k
- Fig. 5.12.c. SEM of room temperature deposited AgInSe2 thin film of thickness 2800A vacuum annealed at 50°C for one hour for magnification 30k
- References
- 6. SUMMARY