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Page: 161
 
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  • Title
  • Dedication
  • Declaration
  • Certificate
  • Abstract
  • Acknowledgement
  • Contents
  • List of Figures
  • List of Tables
  • List of Abbreviations
  • 1. Introduction
  • 2. Modeling quantum transport in DG MOSFETs using NEGF formalism
  • 3. Treatment of scattering in DG MOSFETs
  • 4. Transport characteristics of laterally contacting tri-metal DG MOSFET (LCTM DG MOSFET)
  • 5. Effects of surface roughness on the characteristics of LCTM DG MOSFETs
  • Conclusion
  • Bibliography
  • List of publications